FS150R12KE3 | Eupec Vietnam | Infineon Vietnam

IGBT Silicon Modules
Nhà sản xuất: Eupec - Infineon
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Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 205 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package / Case: EconoPACK
Maximum Operating Temperature: + 125 C
Packaging: Tray
Maximum Gate Emitter Voltage: +/- 20 V  
Minimum Operating Temperature: - 40 C  
Mounting Style: Screw