| Product: |
IGBT Silicon Modules |
|
| Configuration: |
Dual |
|
| Collector- Emitter Voltage VCEO Max: |
1200 V |
|
| Collector-Emitter Saturation Voltage: |
2.15 V |
|
| Continuous Collector Current at 25 C: |
520 A |
|
| Gate-Emitter Leakage Current: |
400 nA |
|
| Pd - Power Dissipation: |
2400 W |
|
| Package / Case: |
62 mm |
|
| Maximum Operating Temperature: |
+ 150 C |
|
| Brand: |
Infineon Technologies |
|
| Maximum Gate Emitter Voltage: |
20 V |
|
| Minimum Operating Temperature: |
- 40 C |
|
| Mounting Style: |
Screw |