BSM75GD120DN2 | Infineon Vietnam | Eupec Vietnam

IGBT Silicon Modules
Nhà sản xuất: Eupec - Infineon
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Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 103 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 520 W
Package / Case: EconoPACK 3A
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V  
Minimum Operating Temperature: - 40 C  
Mounting Style: Screw